infrared led chip a lgaas / gaa s 1. material substrate gaas (n type) epitaxial layer a lgaa s (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics f orward voltag e v f 2.0 v if=50ma reverse current v r 8 v ir=10ua power p o 9 mw if=50ma p 770 nm if=50ma ? 30 nm if=50ma note : power is measured by sorter e/t system with bare chip. 4. mechanical dat a (a) emission area -------------------- 15.0mil x 15.0mil (b) bottom area -------------------- 16.0mil x 16.0mil (c) bonding pad -------------------- 130um (d) chip thickness -------------------- 7.8mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA7716WDD wavelength auk corp. (c) (a) (b) (d)
|
